Founded in 2019 and based in Foshan Nanhai, Plutosemi Co., Ltd. specializes in high-performance semiconductor materials. As an industry leader, we offer advanced production capabilities and high-quality products such as silicon wafers and SOI, featuring high precision for diverse applications. Our one-stop services and customized solutions meet specific customer needs. Widely used in China, Europe, and the USA, we maintain strong partnerships with renowned international companies, upholding the philosophy of "Customer First, Quality Foremost".
The company maintains industry-leading standards with certifications in high-performance semiconductor materials R&D, production, and sales, supporting its position as a leader in the semiconductor materials sector.
The suitable thickness of a thermal oxide layer depends on its function, electrical requirements, masking performance, etching conditions, and process temperature. Thin oxide films may be used as gate dielectrics or interface layers, while thicker films can provide stronger insulation, surface protection, or diffusion masking.
SiC wafer defects are affected by the entire manufacturing chain, from crystal growth and seed preparation to slicing, polishing, cleaning, inspection, and packaging. Defect density is especially important for power semiconductor manufacturers because micropipes, dislocations, inclusions, surface damage, and particles may reduce epitaxial quality or lower final device yield.
Silicon carbide wafers are used as semiconductor substrates for high-power, high-frequency, and high-temperature devices. Compared with conventional silicon, SiC offers a wider bandgap, higher critical electric field, strong thermal performance, and low switching loss potential.
