Boron nitride wafer is mainly composed of boron nitride (BN) and processed through advanced manufacturing processes, possessing stable physical and chemical properties. Boron nitride silicon, as an advanced ceramic material, has shown wide application prospects in various fields such as semiconductors, electronics, optoelectronics, and new energy due to its unique layered structure and excellent thermal conductivity. This wafer not only inherits all the advantages of boron nitride silicon material, but also has been comprehensively optimized in terms of heat resistance, mechanical strength, chemical stability, etc. It is an ideal choice to meet the demand for high-performance materials in modern high-tech industries.

1. High thermal stability:

The Heat Resistance Boron Nitride Wafer is able to maintain stability at extremely high temperatures, thanks to its unique hexagonal boron nitride structure. This structure endows it with the ability to withstand temperatures up to 2000 ℃ or even higher without structural damage or performance degradation. This excellent high thermal stability makes it an indispensable material in many high-temperature application scenarios.

2. Good electrical insulation:

Boron Nitride Wafer has excellent electrical insulation performance and can effectively isolate current in high voltage and high current environments, protecting the stable operation of circuits. This is due to its wide bandgap characteristic, which allows it to withstand high-intensity electric fields without breakdown. Its insulation performance is not affected by environmental factors, and even under harsh conditions such as high temperature and high humidity, it can still maintain good insulation effect.

3. Excellent thermal conductivity:

It also has excellent thermal conductivity, which can quickly conduct and dissipate heat. The unique crystal structure of hexagonal boron nitride results in extremely high in-plane thermal conductivity, second only to diamond. Phonons experience minimal scattering and obstruction during propagation in crystals, effectively conducting heat.

4. Low thermal expansion coefficient:

The thermal expansion coefficient of Boron Nitride Wafer is very low, and there is almost no size change when the temperature changes. This is because the arrangement of boron and nitrogen atoms in its crystal structure is very compact and stable, resulting in minimal isotropic expansion of the material when heated. It can effectively prevent material cracking and damage caused by thermal stress.

5. Chemical stability:

It also has extremely high chemical stability and hardly reacts with the vast majority of chemical substances. Whether in corrosive environments such as strong acids and alkalis, or under extreme conditions such as high temperature and high pressure, it can maintain the stability of its chemical properties, ensuring the quality of the product and the safety of the production process.